• Understand the basic concepts of semiconductor physics.
• Identify the classification of metals, conductors, and semiconductors based on conductivity.
• Describe the properties of elemental and compound semiconductors.
• Explain the difference between intrinsic and extrinsic semiconductors.
• Analyze the effects of doping on semiconductor properties.
• Discuss the significance of charge carriers in semiconductors.
• Illustrate the energy band structure of semiconductors and its implications for conductivity.

Chapter 14: Semiconductor Electronics

14.1 Introduction

• Devices that control the flow of electrons are fundamental to electronic circuits.
• Before transistors, vacuum tubes were used, which are bulky and consume high power.
• Semiconductor devices are smaller, consume less power, and have higher reliability.

14.2 Classification of Metals, Conductors, and Semiconductors

Based on Conductivity

1. Metals:
   • Low resistivity (10⁻² to 10⁻⁸ Ωm)
   • High conductivity (σ = 10² to 10⁸ S/m)
2. Semiconductors:
   • Intermediate resistivity (10⁻⁵ to 10⁶ Ωm)
   • Intermediate conductivity (σ = 10⁵ to 10⁻⁶ S/m)
3. Insulators:
   • High resistivity (> 10¹¹ Ωm)
   • Low conductivity (σ = 10⁻¹¹ to 10⁻¹⁹ S/m)

Types of Semiconductors

• Elemental Semiconductors: Silicon (Si), Germanium (Ge)
• Compound Semiconductors:
  • Inorganic: CdS, GaAs, CdSe, InP
  • Organic: Anthracene, doped phthalocyanines
  • Organic Polymers: Polypyrrole, Polyaniline, Polythiophene

14.3 Intrinsic and Extrinsic Semiconductors

• Intrinsic Semiconductors: Pure materials with equal number of electrons (nₑ) and holes (nₕ).
• Extrinsic Semiconductors: Doped materials, either n-type (more electrons) or p-type (more holes).
  • n-type: Doped with pentavalent atoms (As, Sb, P)
  • p-type: Doped with trivalent atoms (B, Al, In)

14.4 Energy Bands in Semiconductors

• Valence Band: Lower energy levels, fully filled.
• Conduction Band: Higher energy levels, may be empty or partially filled.
• Energy Gap (Eg):
  • Insulators: Eg > 3 eV
  • Semiconductors: Eg = 0.2 to 3 eV
  • Metals: Eg ≈ 0

14.5 p-n Junctions

• Formation: A depletion layer forms at the junction of p-type and n-type semiconductors.
• Biasing:
  • Forward Bias: Decreases barrier, allowing current flow.
  • Reverse Bias: Increases barrier, restricting current flow.

14.6 Applications of Diodes

• Diodes rectify AC voltage, allowing current to flow in one direction only.
• With filters, a DC voltage can be obtained from AC.

Points to Ponder

1. Energy bands are delocalized; Ec and Ev are averages.
2. Doping introduces defects that control semiconductor properties.

Exercises

1. In n-type silicon, which statement is true?
   • (a) Electrons are majority carriers and trivalent atoms are the dopants.
   • (b) Electrons are minority carriers and pentavalent atoms are the dopants.
   • (c) Holes are minority carriers and pentavalent atoms are the dopants.
   • (d) Holes are majority carriers and trivalent atoms are the dopants.
2. Which statement is true for p-type semiconductors?
3. True statements about energy band gaps of carbon, silicon, and germanium.
4. Reasons for hole diffusion in an unbiased p-n junction.
5. Effects of forward bias on a p-n junction.
6. Output frequency in half-wave rectification.